Ru thin film grown by metal organic chemical vapor deposition (MOCVD) was applied in this study as a substrate for superconformal Cu electrodeposition as well as a Cu diffusion barrier at a Cu∕Ru∕SiO2∕Si multilayer system for microelectronics. Bis (ethyl-π-cyclopentadienyl) Ru-based MOCVD Ru thin film had a roughness of about 12% of its thickness and well-developed textures with high purity. It also showed good step coverage in damascene trench structure. Pd catalyst-mediated Cu electrodeposition on Ru surface accomplished formation of continuous Cu film. For gap filling in single damascene structure, bumps indicative of bottom-up acceleration and superfilling were observed during two-step Cu electrodeposition on Ru substrate which involved seeding and filling with conventional three additives system. 30nm-thick Ru film effectively worked as a barrier for interdiffusion and∕or reaction between layers even after annealing at 800°C for 30min. With the exception of slight agglomeration of Cu at elevated temperature, no silicidation or AES-profile broadening was observed in a Cu∕Ru∕SiO2∕Si system.
No takes yet. Share an insight, caveat, or question.
Cho et al. (2004) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: