Improved artificial photosynthesis with InGaN NCs/InGaN/GaN electrodes

This is the authors' abstract. We don't add key points for this paper.

InGaN is a promising photocatalytic material for photocatalytic reduction of carbon dioxide with excellent optical properties and tunable bandwidth between 0.7 and 3.4 eV. However, there are few studies on the effect of InGaN morphology on the photocatalytic reduction of CO2. In this paper, the effect of InGaN photoabsorbent layers with different morphologies on the reduction products in the photocatalytic process is investigated. We found that when using InGaN NCs/InGaN/GaN as the photoanode, the steady-state photocurrent density is enhanced by about two times, and the yields of H2 and CO are significantly higher than those of InGaN/GaN. The CO2 to CO conversion is improved from 0.3448 [Formula: see text]mol/mol to 0.973 [Formula: see text]mol/mol, which is 2.82 times higher than that of InGaN/GaN photoanodes. In addition to H2 and CO, the concentration of hydrocarbons increased and the overall photocatalytic efficiency improved.