Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films

Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of Ge K edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO2 phase was not observed, while phase separation into Sb2O3 and Sb2Te3 occurred. The results indicate Ge–Te bonds with oxygen are related to structural stability.