Output capacitance (COSS) hysteresis has recently been discovered as a new source of power loss in resonant converters with advanced superjunction (SJ) FETs. This brief unveils the physical mechanism responsible for COSShysteresis by means of mixed-mode simulations. A new physical effect, based on stranded charges, is observed in the SJ-FETs processed by multi-implant multiepitaxy with small cell pitch. The alternative trench-filling epitaxial growth is a process suitable to address the resonant converters due to its inherent immunity to the COSShysteresis.
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Roig et al. (2015) studied this question.