SiO2 thin films have been successfully prepared on glass substrates by reactive ion-beam sputtering with ultraviolet (uv) light irradiation from a low-pressure Hg lamp in a partial background pressure of oxygen. X-ray photoelectron spectroscopy, infrared transmission spectroscopy, refractive index measurements, and electron-spin-resonance measurements have been used to investigate the composition and oxygen defects in the films. The deposition process with uv light irradiation improves the film quality, that is, high densification and a high oxidation, because the chemically active O(1D) atoms produced by uv light irradiation are sure to enhance the chemical reaction for SiO2 growth. This process also makes the limitation of the suitable deposition rate increase about five times in comparison with the process without uv light. The preparation, composition, and electrical properties of the SiO2 thin films are described.
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Nomura et al. (1992) studied this question.
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