Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (1120) face

The influence of stacking faults (SFs) on the performance of 4H–SiC (112̄0) Schottky barrier diodes fabricated on the epilayer grown on the substrate which was grown in [112̄0] direction by the sublimation method was investigated. The number of SFs under the Schottky electrode was determined by KOH etching of (11̄00) face cross section. SFs were found to have a severe influence on the leakage current of reverse characteristic and Schottky barrier height. The leakage current is increased even though a few SFs exist under the electrode. The Schottky barrier height is also affected by the SF under the electrode.