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The origin of deep donors in not intentionally doped AlSb grown by molecular beam epitaxy (MBE) has been investigated. It was found that the origin of deep donor is oxygen incorporated during growth of AlSb, and that oxygen comes mainly from the Sb source material used in MBE growth. Decreasing oxygen density in Sb reduced the deep donor density to 5.5×1015 cm−3 in AlSb and reduced the electron density to about 2.5×1011 cm−2 in the InAs/AlSb quantum well.
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Furukawa et al. (1994) studied this question.
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