The impact of interfacial roughness on the resistivity of thin copper films is examined using Monte Carlo simulation. In particular, after comparing the results of the Fuchs-Sondheimer model with those obtained from the simulation of a film bounded by flat surfaces, we highlight the role of collisions with two rough surfaces on electron trajectories. We then calculate the resistivity as a function of the amplitude of interfacial roughness and provide an interpretation of our results in terms of a simple trapping model in which conduction electrons are temporarily localized in surface indentations.
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Rickman et al. (2012) studied this question.
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