Pt/nanostructured WO 3 /SiC Schottky diodes were fabricated and applied for hydrogen gas sensing applications.The nanostructured WO 3 films were synthesized from tungsten coated SiC substrates via an acid-etching method using a 1.5 M HNO 3 solution for 1 hr, 2 hrs and 3 hrs duration.Scanning electron microscopy of the developed films revealed platelet crystals with thicknesses in the order of 20-60 nm and lengths between 100-700 nm.X-ray diffraction analysis revealed that the rate of oxidation of tungsten increases as the duration of acid-etching increases.The devices were tested towards hydrogen gas balanced in air at different temperatures from 25°C to 200°C.At 200°C, voltage shifts of 0.45 V, 0.93 V and 2.37 V were recorded for devices acid-etched for 1 hr, 2 hrs and 3 hrs duration, respectively upon exposure to 1% hydrogen, under a constant forward bias current of 500 µA.
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