Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector

The electronic and optoelectronic properties of 2D alloy Ga 0.84 In 0.16 Se were investigated for the first time. 2D Ga 0.84 In 0.16 Se FETs show p-type conduction behaviors. 2D Ga 0.84 In 0.16 Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga 0.84 In 0.16 Se has great potential for application in photodetection and sensor devices.