Enhanced carrier transport by transition metal doping in WS 2 field effect transistors

FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1-3 orders of magnitude, and consequently elevate electron mobilities by 5-7 times. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.