Evaluation of SiN films for AlGaN/GaN MIS‐HEMTs on Si(111)

In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiNx dielectric films, in order to realize MIS‐HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X‐ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance‐voltage, Hall effect and current‐voltage measurements were carried out on the MIS‐HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)