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December 21, 2021IEEE Journal of Emerging and Selected Topics in Power Electronics

Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-Load Current Stress

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Authors

HYHengyu YuSLShiwei LiangJWJun Wang

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Yu et al. (2021) studied this question.

synapsesocial.com/papers/6aaa0bd00a88a9c60a481eabhttps://doi.org/10.1109/jestpe.2021.3137154
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