A 30-kVA SiC inverter has been developed for investigating challenges in harsh environment power electronics. In this design, operating temperature of both gate driver and power circuit is targeted at 180 °C ambient temperature. Specifically, the design is to achieve outstanding high-temperature (HT) performance at an affordable cost by taking full advantage of commercial components and applying the latest HT gate drive and protection circuit. The inverter has been evaluated at full power for hours in a thermal chamber. Experimental results of HT operation are provided to support the exciting success of the prototype and the promising future of HT power electronics. Meanwhile, comprehensive reviews on the challenges are presented along with the development process. The reviews cover the HT components in this design and the latest research on HT device characterization and packaging technique. At the end, the achievements and remaining challenges are summarized.
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Qi et al. (2018) studied this question.
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