Tunnelling junctions with a SrTiO 3 barrier, one La 0.7 Sr 0.3 MnO 3 electrode and one Fe 3 O 4 electrode were fabricated by pulsed laser deposition. The magnetization, current–voltage characteristics and magnetoresistance of the junctions were measured. The junction magnetoresistance was always negative, strongly bias-dependent at low temperatures and vanished with increasing temperature above about 135 K. Its field dependence was not correlated with the field dependence of the magnetization. This junction magnetoresistance is attributed to indirect tunnelling—as evidenced by current–voltage characteristics—between the Fe 3 O 4 and the La 0.7 Sr 0.3 MnO 3 electrodes.
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Chen et al. (2007) studied this question.
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