Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001), (000-1) and (11-20) oriented SiC substrates were used to fabricate the MOSFETs, with a gate oxide process consisting of a low- temperature deposited oxide followed by NO anneal at 1175°C for 2hrs. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. Temperature characterization up to 225°C was also performed.