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This paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes (OLEDs). The naphthyl-substituted benzidine derivative (NPB) and tris (8-hydroxyquinoline) aluminium (Alq 3 ) are used as the hole transport layer and the emitting layer respectively. The insertion of the n-type ZnS layer enhances the electron injection in the OLEDs. The study was carried out on OLEDs of structures: indium–tin-oxide (ITO)/NPB/Alq 3 /ZnS/LiF/AL, ITO/NPB/Alq 3 /LiF/AL and ITO/NPB/Alq 3 /AL. The luminance and efficiency of the device containing this electron transport layer are increased significantly over those obtained from conventional devices due to better carrier balance.
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Du et al. (2006) studied this question.
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