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We report operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕In0.52Al0.48As double barrier quantum well infrared photodetector, grown on an InP substrate. The n=1 to n=2 intersubband transition gives a peak detection wavelength of 2.09μm at 77 K which is in good agreement with the calculated value for a 3 nm quantum well. The conduction band discontinuity between In0.52Al0.48As and In0.84Ga0.16As is calculated to be 0.675 eV, which offers the possibility of room temperature operation for optimized detectors.
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Lai et al. (2005) studied this question.
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