InGaAs quantum wires (QWRs) with cross sections as narrow as 10 nm×20 nm have been fabricated on a (311)A InP V-grooved substrate under an As2 source. Trench-type InGaAs QWRs consist of (111)A and (331)B facets with an angle of about 22°. Cathode-luminescence and photoluminescence measurements confirmed the luminescence peak arising from the QWRs.
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Sugaya et al. (2001) studied this question.
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