The surface roughness of silicon wafers after different stages of chemomechanical polishing was investigated by light scattering topography, soft-x-ray scattering, and atomic-force microscopy. Quantitative values of the rms roughness, the lateral correlation length, and the roughness exponent are extracted. The results suggest deviations from the ‘‘ideal’’ polishing process at large length scales.
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Teichert et al. (1995) studied this question.
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