Transport due to the hopping of electrons or self-trapped (small-polaron-like) electrons at the band edge in the presence of long-range fluctuations with self-affine fractal dimensions, has been investigated by Monte Carlo simulation. It has been shown that the transport at the band edge with high fractal dimensions changes with temperature from the dispersive type to the Gaussian one, while with low fractal dimensions it is Gaussian even at low temperatures. In addition, the results suggest that large thermal activation energies of carriers in amorphous semiconductors are explained by the hopping of the self-trapped carriers.
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Murayama et al. (1998) studied this question.
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