Design of an epi-thermal neutron flux intensity monitor with GaN wafer for boron neutron capture therapy

Boron neutron capture therapy (BNCT) is a promising cancer therapy. Epi-thermal neutron (0.5 eV < En < 10 keV) flux intensity is one of the basic characteristics for modern BNCT. In this work, based on the 71Ga(n,γ)72Ga reaction, a new simple monitor with gallium nitride (GaN) wafer as activation material was designed by Monte Carlo simulations to precisely measure the absolute integral flux intensity of epi-thermal neutrons especially for practical BNCT. In the monitor, a GaN wafer was positioned in the center of a polyethylene sphere as neutron moderator covered with cadmium (Cd) layer as thermal neutron absorber outside. The simulation results and related analysis indicated that the epi-thermal neutron flux intensity could be precisely measured by the presently designed monitor.