This paper addresses a relatively simple method of measuring Young's modulus and residual stress in microelectromechanical system (MEMS) type structures. A surface profilometer is used to measure the deflection of thin film fixed–fixed beams due to the force applied by the profilometer probe. These measurements are analyzed using analytical beam theory. The treatment of end effects and the accuracy of the measurement are discussed. Measurements and results are presented for PECVD grown silicon nitride films.
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M. W. Denhoff (2003) studied this question.
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