"Bipolar-mode" transistors on a voltage-controlled scheme

A buried-gate vertical JFET (BVFET) operated under forward gate bias shows saturating or nonsaturating drain current characteristics simply by Changing the channel cross section area. BVFET with a proper channel cross section has similar characteristics to a "bipolar-mode" SIT (BSIT) or a depleted base transistor (DBT). A generalized picture is derived relating these forward-biased JFET's to the conventional bipolar transistor (BPT). Analysis of BVFET has proved that the operation of BSIT is completely the same as that of BPT with its base voltage controlled. The current saturation mechanism is discussed in detail in this paper.