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Measurements using an optimized quantum efficient detector reveal that silicon exhibits increased impact-ionization probabilities at 2.25 and 3.23 eV, with quantum yield exceeding unity even at low charge-carrier energies of 1.6 eV. Novelty: ClaimNovelty.NOVEL_FINDING. Consensus alignment: ConsensusAlignment.NEUTRAL.

August 1, 2023AIP AdvancesOpen Access

Impact ionization in silicon at low charge-carrier energies

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Authors

MKMikhail KorpusenkoAalto University AVAnna VaskuriNational Institute of Standards and Technology FMFarshid ManoocheriAalto University

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Korpusenko et al. (2023) studied this question.

synapsesocial.com/papers/6aaa5ca4d0a3c768807e67ea https://doi.org/10.1063/5.0164405

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August 1, 2023AIP AdvancesOpen Access

Impact ionization in silicon at low charge-carrier energies

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Authors

MKMikhail KorpusenkoAalto University AVAnna VaskuriNational Institute of Standards and Technology FMFarshid ManoocheriAalto University

Discussion

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Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Korpusenko et al. (2023) studied this question.

synapsesocial.com/papers/6aaa5ca4d0a3c768807e67ea https://doi.org/10.1063/5.0164405

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