High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

We report on a high-power GaInNAs/GaAs optically pumped semiconductor disk laser operating at a wavelength of 1240 nm. The laser structure consisted of 12 dilute nitride (GaInNAs) quantum wells placed on top of a GaAs/AlAs distributed Bragg reflector, the whole structure being grown by molecular beam epitaxy. A diamond heat spreader was bonded onto the sample for improved heat dissipation. When cooled down to 8°C, the laser produced continuous-wave output power up to 1.46 W in the TEM 00 mode, demonstrating the potential of dilute nitrides for high-power disk laser applications.