Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristics of NO passivated devices has been identified.