Magnetic Field, Temperature, and Time Controlled Manipulation of Switching Mechanism in NiO Film: Evidence of Large Magnetoconductance

NiO film with ∼83 nm average thickness is fabricated by sol−gel dip coating technique. The sharp switching between low and high conducting states having a large ratio of currents (∼10 7 ) at low temperature is observed in the NiO film. We clearly demonstrate that switching effect can be tuned by controlling external parameters such as magnetic field, thermal excitation, and time duration of the applied voltage. Magnetic field induced switching is involved with the extraordinary large magnetoconductance (∼98% at 20 K). Large magnetoconductance is significant for the spintronic applications. The resistive switching memory controlled by the external parameters associated with the signature of large magnetoconductance is fascinating for the multifunctional applications.