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Schottky diodes have been fabricated out of polycrystalline diamond thin films grown in an atmospheric pressure turbulent flame. Doping was accomplished by bubbling the source gas through a solution of diboric trioxide in acetone. The diodes were grown on metallic, noncrystalline substrates. A device fabrication technique utilizing carbide-forming refractory metals as a buffer layer was used to bond the diamond film to the substrate and act as an ohmic contact. The resulting structure avoided the difficulties in flame growth of working with thin detached films. Diode rectification ratios in excess of 300 were observed.
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Glesener et al. (1991) studied this question.
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