The effects of nitrogen doping on the performance of InSnO thin film transistor were investigated. When the nitrogen was doped in the InSnO channel, device characteristics such as turn-on voltage, subthreshold swing, field effect mobility, and on/off current ratio were enhanced. The N2 insertion in the deposition process decreased the density of the interface trap states and enhanced the crystallinity of the InSnO channel layer. These results indicate that device characteristics can be improved by nitrogen doping in the deposition process.
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Kim et al. (2012) studied this question.
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