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Thick silicon dioxide films were prepared by room temperature oxidation of Si(100) induced by Cu3Si. This Cu3Si-enhanced oxidation process is accelerated by ultraviolet (UV) light irradiation. Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to characterize the chemical and structural properties of the silicon dioxide layer underneath the oxidized Cu3Si surface layer. The resulting films of silicon dioxide are denser and stoichiometric when silicon oxidation proceeds under UV irradiation at room temperature.
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Li et al. (1992) studied this question.
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