Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 3, 2018Physical Review Letters

Defect-Assisted Tunneling Electroresistance in Ferroelectric Tunnel Junctions

View Full Paper
Ask AI
Bookmark
Share

Authors

KKKonstantin KlyukinAuburn UniversityLTLingling TaoShenzhen UniversityETEvgeny Y. TsymbalUniversity of Nebraska–Lincoln

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Klyukin et al. (2018) studied this question.

synapsesocial.com/papers/6aab7e11badd37d249c59754https://doi.org/10.1103/physrevlett.121.056601
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ferroelectricity and tunneling electroresistance effect driven by asymmetric polar interfaces in all-oxide ferroelectric tunnel junctions2016 · 89 citations
  2. 2Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier2017 · 258 citations
  3. 3Predictive modelling of ferroelectric tunnel junctions2016 · 119 citations
  4. 4Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories2012 · 353 citations
  5. 5Giant Electroresistance in Ferroelectric Tunnel Junctions2005 · 762 citations