Two-dimensional SnSxSe1−x memristors with tunable plasticity for neuromorphic circuits and proof-of-concept actuation

Memristors have great application prospects in neuromorphic systems, but there are inherent trade-offs between stability, switching ratio and adjustability of traditional memristors. Herein, we fabricate composition-tunable layered SnS x Se 1−x (0 ≤ x ≤ 1) vertical memristors via low-pressure rapid physical vapor deposition and dry transfer, with switching behavior consistent with Sn-vacancy-assisted Ag conductive-filament dynamics. The Ag/SnS 0.5 Se 0.5 /Au device achieves an ultrahigh ON/OFF ratio of 1.68 × 10 7 , a mean threshold voltage of 0.611 ± 0.064 V across 50 functional devices, and 800 cycles in one representative device. Moreover, it successfully emulates key synaptic functions including paired-pulse facilitation and long-term potentiation/depression. We establish an experimentally calibrated SPICE compact model and simulate a single-input threshold circuit. We further construct an open-loop memristor-driven motor system for measured DC motor-speed modulation rather than closed-loop UAV thrust regulation. This work provides a proof-of-concept hardware platform for neuromorphic computing and open-loop actuation systems.