Electron tunneling plays a key role in computing devices. Tunneling is, however, notoriously difficult to characterize inside real device structures. Using pressure modulated conductance microscopy, we demonstrate in situ angstrom-scale tuning and estimation of tunnel gaps with ∼10 nm lateral resolution. By modulating tunnel gaps in Pt/TiOx/Pt memristive oxide nanoswitches, we establish that these devices switch via 2–9 Å modification of the tunnel gap.
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Miao et al. (2009) studied this question.
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