A Compact Analytical Model for the Drain Current of Gate-All-Around Nanowire Tunnel FET Accurate From Sub-Threshold to ON-State

We present a compact analytical model for the drain current of a gate-all-around nanowire tunneling field effect transistor. The model takes into account the effect of oxide thickness, body doping, drain voltage, and gate metal work function. The model uses a tangent line approximation method to integrate the tunneling generation rate in the source-body depletion region. The accuracy of the model is tested against three dimensional numerical simulations calibrated using experimental results. The model predicts the drain current accurately in both the on-state (strong inversion), as well as in the sub-threshold region.