An assessment of all kinds of solutions for potential-induced degradation (PID) of p-type crystalline silicon solar cells reveals that a great demand exists on i) PID-resistant solar cells and ii) on alternative encapsulation materials which protect PID-prone cells in the module. We demonstrate that PIDresistant cells can be obtained by a modification of the SiN antireflection coating. PID is measured by means of a fast cell test based on corona charging. The test proves that the PID effect is not related to metal ions which was supposed in recent publications but to positive ions in general. After encapsulation in standard glass - EVA - back sheet modules and applying -1000 V bias voltage for 25.5 weeks outdoor the measured electrical power loss was < 3 %. In an accelerated stress test PID of similar modules was < 0.5 %. Excellent stability against PID was also obtained for laboratory-type intentionally prepared PID-prone cells in combination with alternative encapsulation materials. In a joint PID test carried out together with German test institutes and solar companies SCHOTT POLY glass - back sheet modules taken from series production were proven to be PIDresistant.
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Nagel et al. (2011) studied this question.