Oxygen precipitation effects on Si n+-p junction leakage behavior

The effects of oxygen precipitation in (100) Si wafers on junction leakage characteristics are investigated for double polysilicon gate field-effect transistor dynamic random-access memory technology. Experimental data indicate the presence of a very large bulk diffusion leakage current component in the elevated (≳45 °C) temperature range. A simple one-dimensional minority-carrier diffusion model predicts the existence of carrier generation centers at the interface between the precipitate-free and the precipitated regions in the bulk.