Current‐voltage ( J ‐ V ) curves of n ‐ GaAs / KOH ( aq ) ‐ Se 2 2 − / Se 2 − and n ‐ Si / acetone ‐ LiClO 4 ‐ Fc + / 0 (ferrocenium ion/ferrocene) solar cells exhibit sigmoidal shapes near the open‐circuit potential. J‐V and flatband potential measurements indicate that the deviation of the J‐V curves from the ideal square‐like shape to S shape is due to the light‐induced displacement of the bandedges. Analytical expressions describing the dependence of light‐induced bandedge shifts on the anodic photocurrent, the density of surface states, and the interfacial charge‐transfer velocity are derived and verified experimentally. Application of the expressions to J‐V data yields quantitative information on the kinetics of interfacial charge transfer.
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Mao et al. (1995) studied this question.