Low-temperature annealing characteristics of the lightly arsenic-doped polycrystalline silicon

Low-temperature annealing characteristics of the lightly arsenic-doped polycrystalline silicon have been studied. It was found that, when the silicon dioxide layer covered on the polycrystalline silicon was moved after high-temperature processing and the polycrystalline silicon was annealed at low temperature, the conductance of the films would increase from one to four orders in magnitude. A possible mechanism for the interaction of the free oxygen in SiO2 with grain boundary is discussed.