ZnO quantum dots (QDs)-SiO2 nanocomposite films were prepared using the target-attached radio-frequency sputtering. The transmission electron microscopy revealed the uniform dispersion of ZnO QDs with diameters about 2–7nm in amorphous SiO2 matrix. The photoluminescence showed that small ZnO QDs are able to emit white light with luminescence spectra similar to those of the present GaN-based light emitting diode (LED). The calculated chromaticity coordinates of emitting light evidenced the feasibility of ZnO QDs-SiO2 nanocomposite films as the fluorescence material in optoelectronic devices.
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Peng et al. (2006) studied this question.
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