A novel In0.53Ga0.47As MIS structure having an ultrathin MBE Si interface control layer (ICL) between InGaAs and photo-CVD SiO2, is described and applied to fabrication of MISFETs. XPS and electrical characterization show that Si ICL prevents selective oxidation of InGaAs and reduces the interface state density. Depletion mode MISFETs gave an effective channel mobility of 1700 cm2/Vs and excellent stability with drain current drift below 1% up to 104 s.
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Akazawa et al. (1989) studied this question.
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