High Speed Anisotropic Reactive Ion Etching of Gold Films

Etching of gold films using chlorine gas was investigated using a parallel plate reactive ion etching machine. Etch rates of 4400 to 9800 Å min −1 were achieved with power levels of 200 to 400 W and pressures of 50 to 100 mTorr. The gold film was patterned with an mask. The lower electrode and sample were heated to 125°C. Under these conditions the etch was anisotropic with no undercutting and no redeposition of gold on the sample. Linewidths as small as 0.5 μm and etch depths of 5 μm were produced.