We present an experimental study of the carrier recombination dynamics in high-quality (InGa)(AsN)/GaAs and Ga(AsN)/GaAs quantum-well structures after picosecond excitation. A comparison among samples with and without nitrogen and with different In concentration shows that nonradiative channels originated in the host matrix [i.e., (InGa)As and GaAs] play a dominant role in the recombination dynamics of these heterostructures.
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Vinattieri et al. (2003) studied this question.
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