The de Haas-van Alphen effect in TiB2

The de Haas-van Alphen (dHvA) effect has been studied in the refractory compound TiB 2 using a field modulation technique. Observed dHvA oscillations in the (1010), (1120) and (0001) planes have frequencies of the order of 10 6 G. The angular dependence of the dHvA frequencies closely resembles that of an electron Fermi surface (FS) of semi-metallic ZrB 2 , though the frequencies of the former are smaller than those of the latter. It is proposed from an analogy with ZrB 2 that TiB 2 is a semi-metal and has a ring-like electron FS around the K point on which nearly ellipsoidal FS are joined together. The oscillations corresponding to the hole FS could not be observed due to the sample limitation. The carrier concentration of electrons calculated from the observed FS was estimated to be about 0.023 per unit cell.