Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n+-p silicon strip sensors

Silicon sensors in next generation hadron colliders will face a tremendously harsh radiation environment. Requirement to study rarest reaction channels with statistical constraints has resulted in a huge increment in radiation flux, resulting in both surface damage and bulk damage. For sensors which are used in a charged hadron environment, both of these degrading processes take place simultaneously. Recently it has been observed in proton irradiated n + -p Si strip sensors that n + strips had a good inter-strip insulation with low values of p-spray and p-stop doping densities which is contrary to the expected behaviour from the current understanding of radiation damage. In this work a simulation model has been devised incorporating radiation damage to understand and provide a possible explanation to the observed behaviour of irradiated sensors.