Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes, Aarik, Jaan, Hudec, Boris, Hušeková, Kristina, Rammula, Raul, Kasikov, Aarne, Arroval, Tõnis, Uustare, Teet, Fröhlich, Karol
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Aarik et al. (2012) studied this question.
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