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This paper reports an analytical approach to interpret the variation of dynamic resistance as a function of the reverse bias voltage in HgCdTe diodes. The method consists of estimating the trap density contributing to the trap assisted tunnelling in the given diode from the observed position of maxima in a dynamic resistance versus reverse bias voltage curve. Good agreement between theory and experiment is reported by using the estimated trap density in this way.
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Singh et al. (2000) studied this question.
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