A homojunction of single-crystalline β-Ga2O3nanowires and nanocrystals

A homojunction of single-crystalline β-Ga 2 O 3 nanowires and nanocrystals was realized. Ga 2 O 3 nanowires were synthesized at about 850–950 °C using a mixture of Ga 2 O 3 and graphite powder with vapor phase epitaxy. It was found that the β-Ga 2 O 3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga 2 O 3 nanocrystals follows the growth direction of the main β-Ga 2 O 3 nanowires. The distance between neighboring atoms in β-Ga 2 O 3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga 2 O 3 .