Synthesis of Silicon Carbide Nanotubes

Single‐phase silicon carbide (SiC) nanotubes were successfully synthesized by the reaction of carbon nanotubes with silicon powder at 1200°C for 100 h. X‐ray diffraction patterns indicated that most of the carbon from the carbon nanotubes that were reacted with silicon at 1200°C for 100 h was transformed to SiC. Transmission electron microscopy observations revealed that both single‐phase SiC nanotubes and C–SiC coaxial nanotubes, which are carbon nanotubes sheathed with a SiC layer, were synthesized after 100 h of reaction. The ratio of single‐phase SiC nanotubes to C–SiC nanotubes increased with heat treatment at 600°C in air for 1 h because the remaining carbon was removed .