Boron- and phosphorus-doped diamond layers were grown successively by microwave plasma-assisted chemical vapour deposition on {111}-oriented boron-doped Ib substrates. The resulting diodes were studied electrically with and without metallization. Although cathodoluminescence results showed that the material quality of the p-type {111} layer could still be improved, Electron Beam Induced Current imaging (EBIC) provided evidence for a space charge region. At room temperature, I(V) characteristics yielded a rectification ratio at +/– 25V varying between 104 and 109. In some cases, this figure remained greater than 106 up to 200 °C, despite a marked increase of the reverse current with temperature. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
No takes yet. Share an insight, caveat, or question.
Tajani et al. (2004) studied this question.